View MMSD103T1_116574.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MMSD103T1
Preferred Device
High Voltage Switching Diode
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc 1 Cathode 2 Anode
http://onsemi.com
THERMAL CHARACTERISTICS
Characteristic Forward Power Dissipation, FR-5 Board (Note 1.) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range 1. FR-5 = 1.0 0.75 0.062 in. Symbol PF Value 400 3.2 174 492 125 Max -55 to +150 Unit mW mW/C C/W C/W C C 1 CASE 425-04, STYLE 1 SOD-123 JS = Specific Device Code
MARKING DIAGRAM
2
JS
RJL RJA TJ Tstg
ORDERING INFORMATION
Device MMSD103T1 Package SOD-123 Shipping 3000 / Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Reverse Breakdown Voltage (IBR = 100 Adc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) IR -- -- V(BR) VF -- -- CD trr -- -- 1000 1250 5.0 50 pF ns 250 1.0 100 -- Vdc mV Adc
(c) Semiconductor Components Industries, LLC, 2001
1
August, 2000 - Rev. 0
Publication Order Number: MMSD103T1/D
MMSD103T1
820 +10 V 2.0 k 100 H 0.1 F D.U.T. 90% 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) IF 0.1 F tr 10% tp t IF trr t
50 OUTPUT PULSE GENERATOR
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
3500 3000 FORWARD VOLTAGE (mV) 2500 2000 1500 1000 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 TA = 155C TA = 25C TA = -55C REVERSE CURRENT (nA)
7000 6000 5000 4000 3000 6 5 4 3 2 1 0
TA = 155C
TA = 25C TA = -55C 1 2 5 10 20 50 100 200 300
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
http://onsemi.com
2
MMSD103T1 INFORMATION FOR USING THE SOD-123 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.91 0.036
2.36 0.093 4.19 0.165
SOD-123
SOD-123 POWER DISSIPATION The power dissipation of the SOD-123 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOD-123 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOD-123 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOD-123 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
http://onsemi.com
3
EEE EEE EEE EEE
EEE EEE EEE EEE
1.22 0.048
mm inches
MMSD103T1
PACKAGE DIMENSIONS
SOD-123 CASE 425-04 ISSUE C
A
C H
K
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
AAAA AAAA
2
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.01 --0.000 0.004 --0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --0.00 0.10 --0.15 3.55 3.85
B
E J
D
STYLE 1: PIN 1. CATHODE 2. ANODE
http://onsemi.com
4
MMSD103T1/D

▲Up To Search▲

Price & Availability of MMSD103T1

	To Download MMSD103T1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .